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SISHA04DN-T1-GE3

SISHA04DN-T1-GE3

SISHA04DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 30.9A/40A PPAK

compliant

SISHA04DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.00000 $1
500 $0.99 $495
1000 $0.98 $980
1500 $0.97 $1455
2000 $0.96 $1920
2500 $0.95 $2375
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30.9A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 77 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 3595 pF @ 15 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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