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SISH108DN-T1-GE3

SISH108DN-T1-GE3

SISH108DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 14A PPAK1212-8SH

non-compliant

SISH108DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.20090 -
6,000 $0.18865 -
15,000 $0.17641 -
30,000 $0.16784 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8SH
Package / Case PowerPAK® 1212-8SH
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