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SIS990DN-T1-GE3

SIS990DN-T1-GE3

SIS990DN-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 100V 12.1A 1212-8

non-compliant

SIS990DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.43624 -
6,000 $0.41576 -
15,000 $0.40113 -
0 items
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 12.1A
Rds On (Max) @ Id, Vgs 85mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 250pF @ 50V
Power - Max 25W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® 1212-8 Dual
Supplier Device Package PowerPAK® 1212-8 Dual
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