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SIS862DN-T1-GE3

SIS862DN-T1-GE3

SIS862DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 40A PPAK1212-8

compliant

SIS862DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.55350 -
6,000 $0.52751 -
15,000 $0.50895 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1320 pF @ 30 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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