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SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 30A PPAK1212-8

compliant

SIS435DNT-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33900 -
6,000 $0.31700 -
15,000 $0.30600 -
30,000 $0.30000 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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