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SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

SIS435DNT-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 30A PPAK1212-8

non-compliant

SIS435DNT-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.33900 -
6,000 $0.31700 -
15,000 $0.30600 -
30,000 $0.30000 -
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 5.4mOhm @ 13A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.7W (Ta), 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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