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SIS407DN-T1-GE3

SIS407DN-T1-GE3

SIS407DN-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 25A PPAK1212-8

compliant

SIS407DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.47560 -
6,000 $0.45327 -
15,000 $0.43732 -
4372 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15.3A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93.8 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.6W (Ta), 33W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
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