Welcome to ichome.com!

logo
Home

SIS108DN-T1-GE3

SIS108DN-T1-GE3

SIS108DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 80V 6.7A/16A PPAK

compliant

SIS108DN-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.43445 $0.43445
500 $0.4301055 $215.05275
1000 $0.425761 $425.761
1500 $0.4214165 $632.12475
2000 $0.417072 $834.144
2500 $0.4127275 $1031.81875
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Ta), 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 34mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 545 pF @ 40 V
FET Feature -
Power Dissipation (Max) 3.2W (Ta), 24W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

RSF010P03TL
FQD13N10TM
FQD13N10TM
$0 $/piece
UJ4C075023K4S
UJ4C075023K4S
$0 $/piece
DMN2046U-7
R6006ANDTL
2N7002NXBKR
DMT3020LFVW-7
STD1HN60K3
PXN010-30QLJ

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.