Welcome to ichome.com!

logo
Home

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

SIRA10BDP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 30A/60A PPAK SO8

compliant

SIRA10BDP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.34021 -
6,000 $0.31675 -
15,000 $0.30502 -
30,000 $0.29862 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 1710 pF @ 15 V
FET Feature -
Power Dissipation (Max) 5W (Ta), 43W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STW26NM60N
IXFT88N30P
IXFT88N30P
$0 $/piece
FDB12N50TM
FDB12N50TM
$0 $/piece
RM130N30D3
RM130N30D3
$0 $/piece
SQJ164ELP-T1_GE3
NVMFS5C604NLWFAFT1G
NVMFS5C604NLWFAFT1G
$0 $/piece
SCH1332-TL-W
SCH1332-TL-W
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.