Welcome to ichome.com!

logo
Home

SIR616DP-T1-GE3

SIR616DP-T1-GE3

SIR616DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 200V 20.2A PPAK SO-8

compliant

SIR616DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.70192 -
6,000 $0.66896 -
15,000 $0.64542 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 50.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 28 nC @ 7.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 100 V
FET Feature -
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

FQPF16N25C
FQPF16N25C
$0 $/piece
SIR570DP-T1-RE3
STB34NM60N
BUZ111S
RM80N60DF
RM80N60DF
$0 $/piece
STP6N62K3
STP6N62K3
$0 $/piece
FDMS8680
FDMS8680
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.