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SIR182DP-T1-RE3

SIR182DP-T1-RE3

SIR182DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 60V 60A PPAK SO-8

non-compliant

SIR182DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.84956 -
6,000 $0.82008 -
1232 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 2.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 30 V
FET Feature -
Power Dissipation (Max) 69.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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