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SIR104DP-T1-RE3

SIR104DP-T1-RE3

SIR104DP-T1-RE3

Vishay Siliconix

MOSFET N-CH 100V 18.3A/79A PPAK

non-compliant

SIR104DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.27323 -
6,000 $1.22905 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18.3A (Ta), 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 6.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 84 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4230 pF @ 50 V
FET Feature -
Power Dissipation (Max) 5.4W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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