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SIHU4N80E-GE3

SIHU4N80E-GE3

SIHU4N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 4.3A IPAK

SOT-23

non-compliant

SIHU4N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.21000 $2.21
10 $2.00300 $20.03
100 $1.62230 $162.23
500 $1.27576 $637.88
1,000 $1.06785 -
2,500 $0.99855 -
5,000 $0.96390 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package IPAK (TO-251)
Package / Case TO-251-3 Long Leads, IPak, TO-251AB
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