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SIHU2N80E-GE3

SIHU2N80E-GE3

SIHU2N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 2.8A IPAK

compliant

SIHU2N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.75000 $1.75
10 $1.55200 $15.52
100 $1.22620 $122.62
500 $0.95096 $475.48
1,000 $0.75075 -
3,000 $0.70070 -
6,000 $0.66567 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315 pF @ 100 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251AA
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
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