Welcome to ichome.com!

logo
Home

SIHP080N60E-GE3

SIHP080N60E-GE3

SIHP080N60E-GE3

Vishay Siliconix

E SERIES POWER MOSFET TO-220AB,

SOT-23

non-compliant

SIHP080N60E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.60000 $4.6
500 $4.554 $2277
1000 $4.508 $4508
1500 $4.462 $6693
2000 $4.416 $8832
2500 $4.37 $10925
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 80mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 63 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2557 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.