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SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

SIHJ10N60E-T1-GE3

Vishay Siliconix

MOSFET N-CH 600V 10A PPAK SO-8

non-compliant

SIHJ10N60E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.31000 $3.31
10 $3.00200 $30.02
100 $2.43080 $243.08
500 $1.91160 $955.8
1,000 $1.60008 -
3,000 $1.49624 -
6,000 $1.44432 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 360mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 784 pF @ 100 V
FET Feature -
Power Dissipation (Max) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
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