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SIHG33N65EF-GE3

SIHG33N65EF-GE3

SIHG33N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 31.6A TO247AC

non-compliant

SIHG33N65EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $7.93000 $7.93
10 $7.16100 $71.61
100 $5.93740 $593.74
500 $5.01970 $2509.85
1,000 $4.40789 -
2,500 $4.25493 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 31.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 109mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 171 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4026 pF @ 100 V
FET Feature -
Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
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