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SIHFR120-GE3

SIHFR120-GE3

SIHFR120-GE3

Vishay Siliconix

MOSFET N-CHANNEL 100V

compliant

SIHFR120-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.73000 $0.73
500 $0.7227 $361.35
1000 $0.7154 $715.4
1500 $0.7081 $1062.15
2000 $0.7008 $1401.6
2500 $0.6935 $1733.75
2745 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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