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SIHFBE30S-GE3

SIHFBE30S-GE3

SIHFBE30S-GE3

Vishay Siliconix

MOSFET N-CHANNEL 800V

non-compliant

SIHFBE30S-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.92000 $1.92
500 $1.9008 $950.4
1000 $1.8816 $1881.6
1500 $1.8624 $2793.6
2000 $1.8432 $3686.4
2500 $1.824 $4560
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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