Welcome to ichome.com!

logo
Home

SIHF6N65E-GE3

SIHF6N65E-GE3

SIHF6N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 7A TO220

compliant

SIHF6N65E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.77000 $2.77
10 $2.51200 $25.12
100 $2.03430 $203.43
500 $1.59976 $799.88
1,000 $1.33905 -
3,000 $1.25215 -
5,000 $1.20870 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 820 pF @ 100 V
FET Feature -
Power Dissipation (Max) 31W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIHA12N60E-GE3
JDX5010
JDX5010
$0 $/piece
STF16N90K5
RV2C014BCT2CL
PMV65ENEAR
PMV65ENEAR
$0 $/piece
STP23N80K5
SI2324DS-T1-GE3

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.