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SIHD2N80AE-GE3

SIHD2N80AE-GE3

SIHD2N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 2.9A DPAK

compliant

SIHD2N80AE-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.58080 $0.5808
500 $0.574992 $287.496
1000 $0.569184 $569.184
1500 $0.563376 $845.064
2000 $0.557568 $1115.136
2500 $0.55176 $1379.4
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.9Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 180 pF @ 100 V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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