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SIHD186N60EF-GE3

SIHD186N60EF-GE3

SIHD186N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 19A DPAK

non-compliant

SIHD186N60EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.23000 $3.23
500 $3.1977 $1598.85
1000 $3.1654 $3165.4
1500 $3.1331 $4699.65
2000 $3.1008 $6201.6
2500 $3.0685 $7671.25
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 201mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1118 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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