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SIHB4N80E-GE3

SIHB4N80E-GE3

SIHB4N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 4.3A D2PAK

non-compliant

SIHB4N80E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.27050 $1.2705
500 $1.257795 $628.8975
1000 $1.24509 $1245.09
1500 $1.232385 $1848.5775
2000 $1.21968 $2439.36
2500 $1.206975 $3017.4375
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.27Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 622 pF @ 100 V
FET Feature -
Power Dissipation (Max) 69W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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