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SIHB35N60EF-GE3

SIHB35N60EF-GE3

SIHB35N60EF-GE3

Vishay Siliconix

MOSFET N-CH 600V 32A D2PAK

compliant

SIHB35N60EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $7.38000 $7.38
10 $6.61200 $66.12
100 $5.46360 $546.36
500 $4.46832 $2234.16
1,000 $3.80480 -
2,500 $3.62616 -
42 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 97mOhm @ 17A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 134 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2568 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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