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SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

SIHB33N60ET1-GE3

Vishay Siliconix

MOSFET N-CH 600V 33A TO263

non-compliant

SIHB33N60ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $3.88500 $3108
1,600 $3.64080 -
2,400 $3.46986 -
0 items
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 3508 pF @ 100 V
FET Feature -
Power Dissipation (Max) 278W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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