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SIHB30N60ET5-GE3

SIHB30N60ET5-GE3

SIHB30N60ET5-GE3

Vishay Siliconix

N-CHANNEL 600V

SOT-23

non-compliant

SIHB30N60ET5-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.35000 $6.35
500 $6.2865 $3143.25
1000 $6.223 $6223
1500 $6.1595 $9239.25
2000 $6.096 $12192
2500 $6.0325 $15081.25
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2600 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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