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SIHB24N80AE-GE3

SIHB24N80AE-GE3

SIHB24N80AE-GE3

Vishay Siliconix

MOSFET N-CH 800V 21A D2PAK

SOT-23

non-compliant

SIHB24N80AE-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.73000 $3.73
500 $3.6927 $1846.35
1000 $3.6554 $3655.4
1500 $3.6181 $5427.15
2000 $3.5808 $7161.6
2500 $3.5435 $8858.75
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) -
Rds On (Max) @ Id, Vgs 184mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1836 pF @ 100 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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