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SIHB24N65EF-GE3

SIHB24N65EF-GE3

SIHB24N65EF-GE3

Vishay Siliconix

MOSFET N-CH 650V 24A D2PAK

non-compliant

SIHB24N65EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $6.87000 $6.87
10 $6.15600 $61.56
100 $5.08680 $508.68
500 $4.16016 $2080.08
1,000 $3.54240 -
3,000 $3.37608 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 156mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 100 V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-263 (D²Pak)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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