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SIHB22N65E-T1-GE3

SIHB22N65E-T1-GE3

SIHB22N65E-T1-GE3

Vishay Siliconix

N-CHANNEL 650V

non-compliant

SIHB22N65E-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $5.04000 $5.04
500 $4.9896 $2494.8
1000 $4.9392 $4939.2
1500 $4.8888 $7333.2
2000 $4.8384 $9676.8
2500 $4.788 $11970
797 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2415 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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