Welcome to ichome.com!

logo
Home

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO263

non-compliant

SIHB22N60ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $2.24000 $1792
1,600 $2.09920 -
2,400 $2.00064 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIDR668DP-T1-GE3
R6024VNXC7G
AUIRF6215
IXTH68P20T
IXTH68P20T
$0 $/piece
SI2356DS-T1-GE3
FQP3N50C
IPI65R110CFD
SQS415ENW-T1_GE3
STB80N4F6AG

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.