Welcome to ichome.com!

logo
Home

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

SIHB22N60ET1-GE3

Vishay Siliconix

MOSFET N-CH 600V 21A TO263

compliant

SIHB22N60ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
800 $2.24000 $1792
1,600 $2.09920 -
2,400 $2.00064 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1920 pF @ 100 V
FET Feature -
Power Dissipation (Max) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIDR668DP-T1-GE3
R6024VNXC7G
AUIRF6215
IXTH68P20T
IXTH68P20T
$0 $/piece
SI2356DS-T1-GE3
FQP3N50C
IPI65R110CFD
SQS415ENW-T1_GE3
STB80N4F6AG

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.