Welcome to ichome.com!

logo
Home

SIHB12N65E-GE3

SIHB12N65E-GE3

SIHB12N65E-GE3

Vishay Siliconix

MOSFET N-CH 650V 12A D2PAK

non-compliant

SIHB12N65E-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.32000 $3.32
10 $3.01100 $30.11
100 $2.43830 $243.83
500 $1.91748 $958.74
1,000 $1.60500 -
3,000 $1.50084 -
5,000 $1.44876 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1224 pF @ 100 V
FET Feature -
Power Dissipation (Max) 156W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STD11N65M5
SIR106DP-T1-RE3
SQM120N04-1M9_GE3
SIDR402DP-T1-GE3
BUK9Y41-80E,115
2SK1459LS
2SK1459LS
$0 $/piece
FDD86369-F085
FDD86369-F085
$0 $/piece
IRFR430ATRLPBF
RD3T075CNTL1

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.