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SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

SIHB12N60ET1-GE3

Vishay Siliconix

MOSFET N-CH 600V 12A TO263

compliant

SIHB12N60ET1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $2.35000 $2.35
10 $2.13100 $21.31
100 $1.72530 $172.53
500 $1.35676 $678.38
1,000 $1.13565 -
2,500 $1.06195 -
5,000 $1.02510 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 937 pF @ 100 V
FET Feature -
Power Dissipation (Max) 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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