Welcome to ichome.com!

logo
Home

SIHB12N50C-E3

SIHB12N50C-E3

SIHB12N50C-E3

Vishay Siliconix

MOSFET N-CH 500V 12A D2PAK

compliant

SIHB12N50C-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1,000 $3.09960 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 555mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1375 pF @ 25 V
FET Feature -
Power Dissipation (Max) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STWA75N60M6
IRFB3256PBF
DMN61D9UWQ-7
IXFA22N65X2-TRL
IXFA22N65X2-TRL
$0 $/piece
SISH129DN-T1-GE3
CPH3360-TL-H
CPH3360-TL-H
$0 $/piece
LP0701N3-G
SUM80090E-GE3

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.