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SIHB10N40D-GE3

SIHB10N40D-GE3

SIHB10N40D-GE3

Vishay Siliconix

MOSFET N-CH 400V 10A TO263

non-compliant

SIHB10N40D-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.88000 $1.88
10 $1.70000 $17
100 $1.36620 $136.62
500 $1.06260 $531.3
1,000 $0.88044 -
3,000 $0.81972 -
5,000 $0.78936 -
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 526 pF @ 100 V
FET Feature -
Power Dissipation (Max) 147W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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