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SIHA21N65EF-GE3

SIHA21N65EF-GE3

SIHA21N65EF-GE3

Vishay Siliconix

N-CHANNEL 600V

compliant

SIHA21N65EF-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $4.95000 $4.95
500 $4.9005 $2450.25
1000 $4.851 $4851
1500 $4.8015 $7202.25
2000 $4.752 $9504
2500 $4.7025 $11756.25
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2322 pF @ 100 V
FET Feature -
Power Dissipation (Max) 35W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
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