Welcome to ichome.com!

logo
Home

SIE836DF-T1-E3

SIE836DF-T1-E3

SIE836DF-T1-E3

Vishay Siliconix

MOSFET N-CH 200V 18.3A 10POLARPK

compliant

SIE836DF-T1-E3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 18.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (SH)
Package / Case 10-PolarPAK® (SH)
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

FQP6N90
FQP6N90
$0 $/piece
ZXM61P03FTC
IXFP4N100Q
IXFP4N100Q
$0 $/piece
IXFH10N100Q
IXFH10N100Q
$0 $/piece
NTD4805N-1G
NTD4805N-1G
$0 $/piece

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.