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SIE822DF-T1-GE3

SIE822DF-T1-GE3

SIE822DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 50A 10POLARPAK

compliant

SIE822DF-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.41075 -
6,000 $1.35850 -
1678 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.4mOhm @ 18.3A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 10 V
FET Feature -
Power Dissipation (Max) 5.2W (Ta), 104W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 10-PolarPAK® (S)
Package / Case 10-PolarPAK® (S)
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