Welcome to ichome.com!

logo
Home

SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

SIDR638DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 40V 100A PPAK SO-8DC

non-compliant

SIDR638DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.06354 -
6,000 $1.02663 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.88mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 204 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 20 V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

STD10N60M6
TN0110N3-G
PSMN025-80YLX
NTD4860N-1G
NTD4860N-1G
$0 $/piece
IXTA102N15T
IXTA102N15T
$0 $/piece
DMN2310U-13

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.