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SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

SIDR626DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 60V 42.8A/100A PPAK

non-compliant

SIDR626DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $1.36323 -
6,000 $1.31274 -
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 42.8A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5130 pF @ 30 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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