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SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3

SIDR5102EP-T1-RE3

Vishay Siliconix

N-CHANNEL 100 V (D-S) 175C MOSFE

non-compliant

SIDR5102EP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $3.11000 $3.11
500 $3.0789 $1539.45
1000 $3.0478 $3047.8
1500 $3.0167 $4525.05
2000 $2.9856 $5971.2
2500 $2.9545 $7386.25
0 items
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Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28.2A (Ta), 126A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 4.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 50 V
FET Feature -
Power Dissipation (Max) 7.5W (Ta), 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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