Welcome to ichome.com!

logo
Home

SIDR392DP-T1-RE3

SIDR392DP-T1-RE3

SIDR392DP-T1-RE3

Vishay Siliconix

N-CHANNEL 30-V (D-S) MOSFET

non-compliant

SIDR392DP-T1-RE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.82000 $1.82
500 $1.8018 $900.9
1000 $1.7836 $1783.6
1500 $1.7654 $2648.1
2000 $1.7472 $3494.4
2500 $1.729 $4322.5
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 82A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 0.62mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 188 nC @ 10 V
Vgs (Max) +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds 9530 pF @ 15 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.