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SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

SIDR220DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 87.7A/100A PPAK

compliant

SIDR220DP-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $1.49243 $1.49243
500 $1.4775057 $738.75285
1000 $1.4625814 $1462.5814
1500 $1.4476571 $2171.48565
2000 $1.4327328 $2865.4656
2500 $1.4178085 $3544.52125
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 87.7A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V
Vgs (Max) +16V, -12V
Input Capacitance (Ciss) (Max) @ Vds 1085 pF @ 10 V
FET Feature -
Power Dissipation (Max) 6.25W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8DC
Package / Case PowerPAK® SO-8
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