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SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

SIB900EDK-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 1.5A SC-75-6

compliant

SIB900EDK-T1-GE3 Pricing & Ordering

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3,000 $0.22563 -
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Name Value
Product Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.5A
Rds On (Max) @ Id, Vgs 225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds -
Power - Max 3.1W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-75-6L Dual
Supplier Device Package PowerPAK® SC-75-6L Dual
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