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SIB412DK-T1-GE3

SIB412DK-T1-GE3

SIB412DK-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 9A PPAK SC75-6

compliant

SIB412DK-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.00000 $0
500 $0 $0
1000 $0 $0
1500 $0 $0
2000 $0 $0
2500 $0 $0
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 6.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.16 nC @ 5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 535 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2.4W (Ta), 13W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-75-6
Package / Case PowerPAK® SC-75-6
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