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SIA850DJ-T1-GE3

SIA850DJ-T1-GE3

SIA850DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 190V 950MA PPAK

non-compliant

SIA850DJ-T1-GE3 Pricing & Ordering

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Name Value
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 190 V
Current - Continuous Drain (Id) @ 25°C 950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.5 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 90 pF @ 100 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
Package / Case PowerPAK® SC-70-6 Dual
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