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SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

SIA810DJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 4.5A PPAK SC70-6

compliant

SIA810DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.44280 -
Inventory changes frequently.
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 53mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11.5 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 400 pF @ 10 V
FET Feature Schottky Diode (Isolated)
Power Dissipation (Max) 1.9W (Ta), 6.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Dual
Package / Case PowerPAK® SC-70-6 Dual
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