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SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

SIA477EDJT-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 12A PPAK SC70-6

non-compliant

SIA477EDJT-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.18772 -
6,000 $0.17628 -
15,000 $0.16484 -
30,000 $0.15683 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 13mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 3050 pF @ 6 V
FET Feature -
Power Dissipation (Max) 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
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