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SIA466EDJ-T1-GE3

SIA466EDJ-T1-GE3

SIA466EDJ-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 25A PPAK SC70-6

non-compliant

SIA466EDJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.29069 -
6,000 $0.27183 -
15,000 $0.26240 -
30,000 $0.25725 -
0 items
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Wholesale Prices for Every Order, Big or Small
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Name Value
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 1 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19.2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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