Welcome to ichome.com!

logo
Home

SIA465EDJ-T1-GE3

SIA465EDJ-T1-GE3

SIA465EDJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A PPAK SC70-6

non-compliant

SIA465EDJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
6,000 $0.17628 -
0 items
Bom Cost Down
Bom Cost Down
Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 16.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 2130 pF @ 10 V
FET Feature -
Power Dissipation (Max) 19W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
PDF loading failed, you can try to open in a new window to access [Open], or click to return

Related Part Number

SIHB186N60EF-GE3
NVTFWS007N08HLTAG
NVTFWS007N08HLTAG
$0 $/piece
DMN67D8LV-7
RJK6002DPH-E0#T2
RJK6002DPH-E0#T2
$0 $/piece
2SJ607-ZJ-AZ
2SJ607-ZJ-AZ
$0 $/piece
MCAC80P06Y-TP

Your Reliable Partner In Electronics

Dedicated to exceeding your expectations. IChome: Customer service redefined for the electronics industry.