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SIA437DJ-T1-GE3

SIA437DJ-T1-GE3

SIA437DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 29.7A PPAK SC70

non-compliant

SIA437DJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
3,000 $0.29747 -
6,000 $0.27817 -
15,000 $0.26852 -
30,000 $0.26325 -
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Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 29.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 14.5mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 8 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 2340 pF @ 10 V
FET Feature -
Power Dissipation (Max) 3.5W (Ta), 19W (Tc)
Operating Temperature -50°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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