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SIA4371EDJ-T1-GE3

SIA4371EDJ-T1-GE3

SIA4371EDJ-T1-GE3

Vishay Siliconix

P-CHANNEL 30-V (D-S) MOSFET POWE

non-compliant

SIA4371EDJ-T1-GE3 Pricing & Ordering

Quantity Unit Price Ext. Price
1 $0.56000 $0.56
500 $0.5544 $277.2
1000 $0.5488 $548.8
1500 $0.5432 $814.8
2000 $0.5376 $1075.2
2500 $0.532 $1330
0 items
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Wholesale Prices for Every Order, Big or Small
Wholesale Prices for Every Order, Big or Small
Name Value
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 3.7A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds -
FET Feature -
Power Dissipation (Max) 2.9W (Ta), 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6
Package / Case PowerPAK® SC-70-6
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